Dustproof fabric for a semiconductor cleanroom

摘要

A dustproof fabric for a semiconductor cleanroom is provided which achieves a high dustproof performance and high wearing-comfort. The dustproof fabric comprises : an inner layer 103 formed of a knitted fabric; an intermediate layer 102 attached on the inner layer and formed of a high moisture-absorbency polyurethane resin film of nonmicroporous type, and an outer layer 101 attached on the intermediate layer and formed of a high density polyester woven fabric containing warps and wefts of conductive yarn aligned and spaced a little apart from each other.