| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film having safety, convenience and environmental properties and small in coating loss in short wavelength regions by scattering gaseous xenon fluoride in the process of film formation. SOLUTION: A vapor depositing material 3 placed on a vapor-depositing source 2 is heated to evaporate and is scattered toward a substrate 5 to form a thin film on the substrate 5. A part of gaseous xenon fluoride sublimated in a gasifying device 4 and scattered into a vacuum chamber 1 is dissociated in a vacuum atmosphere, and xenon and fluorine are changed into a state of radicals, ions, atoms or the like. The fluorine is high in reactivity and, in the stage in which the vapor depositing material 3 in which fluorine has been made deficient by the heating on the vapor depositing source 2 scatters toward the substrate 5 and in the film forming stage, it can fill up the deficiency of fluorine. Moreover, since the xenon fluoride itself functions as a fluorinating agent, it has an effect of filling up the one in which fluorine has been made deficient. In this way, film loss can be reduced in short wavelength regions from an ultraviolet region of <=400 nm wavelength to a vacuum ultraviolet region. |
