| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a silicon carbide single crystal, capable of producing the defect-free and highly pure single crystal having a high quality and useful for high temperature semiconductors and power device substrates. SOLUTION: The characteristic of this method for growing a silicon carbide single crystal comprises disposing a boron or aluminum-containing layer 3 on the interface between a SiC single crystal substrate 1 and a CVD-SiC polycrystal 2, thus accelerating a phase transfer ofβ→αand the growth of the single crystal and producing a large single crystal having a good quality without causing the contamination of a substrate crystal by impurities, the generation of detects, and the contamination of the single crystal by boron or the like contained in the interfacial layer. The growth of the single crystal is carried out in a solid phase to solve the contamination of the single crystal by impurities and the generation of defects by conventional high temperature gas phase growth methods such as Acheson method and a sublimation method.
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