发明名称 |
Light emitting diode with asymmetrical energy band structure |
摘要 |
A high bandgap material is used as a cladding layer to confine the carrier overflow in a aluminum-gallium-indium-phosphide light emitting diode. The quantum efficiency is improved. The use of this high bandgap material as a window material also prevents current crowding. The efficiency can further be improved by using a Distributed Bragg Reflector in the structure to reflect light, and a buffer layer to reduce interface dislocation.
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申请公布号 |
US5917201(A) |
申请公布日期 |
1999.06.29 |
申请号 |
US19970923586 |
申请日期 |
1997.09.04 |
申请人 |
EPISTAR CO. |
发明人 |
MING-JIUNN, JOU;BIING-JYE, LEE;TARN, JACOB C. |
分类号 |
H01L33/06;H01L33/12;H01L33/14;H01L33/30;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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