Method of channel doping using diffusion from implanted polysilicon
摘要
A method of doping an integrated circuit device channel in a semiconductor substrate laterally enclosed by an isolation structure is disclosed. The method includes steps of forming a thin oxide layer overlying the integrated circuit device channel and the isolation structure, depositing a polysilicon blanket layer overlying the thin oxide layer, patterning a photoresist mask overlying the polysilicon blanket layer and implanting dopant impurities into the polysilicon blanket layer. The method further includes steps of diffusing the dopant impurities from the polysilicon blanket layer through the thin oxide layer into the integrated circuit device channel, removing the polysilicon blanket layer, and removing the thin oxide layer.
申请公布号
US5918129(A)
申请公布日期
1999.06.29
申请号
US19970806562
申请日期
1997.02.25
申请人
ADVANCED MICRO DEVICES, INC.
发明人
FULFORD, JR., H. JIM;DAWSON, ROBERT;GARDNER, MARK I.;HAUSE, FREDERICK N.;MICHAEL, MARK W.;MOORE, BRADLEY T.;WRISTERS, DERICK J.