发明名称 SINTERED COMPACT OF SILICON NITRIDE
摘要 PROBLEM TO BE SOLVED: To obtain a good sintered compact of silicon nitride having higher strength and excellent abrasion resistance and oxidation resistance, and scarcely having heterogeneous phase. SOLUTION: This sintered compact of silicon nitride has a composition of 80-97 wt.% silicon nitride, 1-10 wt.% Ce expressed in terms of CeO, 0.5-5 wt.% Mg expressed in terms of MgO, 0.5-5 wt.% Sr expressed in terms of SrO and 5.5-6.9 Si expressed in terms of SiO2 , and the weight ratio of SiO2 /MgO regulated so as to be within a range of 1.4-1.7.
申请公布号 JPH11171650(A) 申请公布日期 1999.06.29
申请号 JP19970339556 申请日期 1997.12.10
申请人 NGK INSULATORS LTD 发明人 KINOSHITA TOSHIHARU
分类号 C04B35/584 主分类号 C04B35/584
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