| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for growing a semiconductor single crystal by Czochralski method, capable of growing the semiconductor single crystal free from a growth stripe, even on the growth of the semiconductor single crystal having a large caliber, by spontaneously rotating a semiconductor molten liquid without rotating a crucible. SOLUTION: This method for growing a semiconductor single crystal comprises holding a semiconductor molten liquid 4 in a magnetic field, applying an electric current between the semiconductor molten liquid and the growing semiconductor single crystal and simultaneously growing the single crystal 5 by Czochralski method. The strength of the magnetic field and the value of the applied electric current are independently changed to accurately control the rotation number of the semiconductor molten liquid. The positions of electrodes inserted into the semiconductor molten liquid can be changed to control the distribution of the rotation numbers of the semiconductor molten liquid. |
