| 摘要 |
<p>A semiconductor device is disclosed. The semiconductor device include: a semiconductor substrate; a plurality of vertical type construction transistors, each of the transistors including; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; first, second, and third electrodes, the first electrode being electrically connected to the base layer, the second electrode being electrically connected to one of the emitter layer and the collector layer, the third electrode being formed on the semiconductor multilayer, and being electrically connected to the other of the emitter layer and the collector layer; a first interconnection, formed on the semiconductor substrate, for electrically connecting a plurality of the first electrodes to each other; a second interconnection, formed on the semiconductor substrate in a non-intersecting relationship with the first interconnection, for electrically connecting a plurality of the second electrodes to each other; and a plurality of bump electrodes configured to receive a third interconnection for electrically connecting the plurality of bump electrodes to each other, each of the plurality of bump electrodes being formed on a respective one of the third electrodes.</p> |
