发明名称 |
Method of forming a microelectronic device incorporating low resistivity straps between regions |
摘要 |
A microelectronic device (10) provides decreased use of bar area to form contacts between a conductive strap (24) or interconnect and subsequent levels. The conductive strap comprises a conducting layer (130) and an overlying semiconducting layer (132). Connection to subsequent levels is made generally overlying substrate conductive areas such as a gate (14) and/or a moat (16). Connection to conductive sublayer (130) is accomplished by doping an overlying semiconductor sublayer (132). Any counter-doping of substrate conductive areas is blocked by an overlying well of dopant-masking (33) or sufficiently thick semiconducting (32) material.
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申请公布号 |
US5918145(A) |
申请公布日期 |
1999.06.29 |
申请号 |
US19950481900 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RODDER, MARK S. |
分类号 |
H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L211/320;H01L21/324 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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