| 摘要 |
A silicon oxide insulator (SOI) device (A) includes an SOI layer (14, 154, 174) supported on a silicon substrate (12, 156, 172). A body region (B) is disposed on the SOI layer (14, 154, 174), and the body region (B) is characterized by a first conductivity type. Source and drain regions (C) are juxtaposed with the body region, with the source and drain regions (C) being characterized by a second conductivity type. A transition region (D) is disposed near the body region above the SOI layer (14, 154, 174), and the conductivity type of the transition region (D) is established to be the first conductivity type for suppressing floating body effects in the body region (B) and the second conductivity type for isolating the body region. An ohmic connector (E) contacts the transition region (D) and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants. SOI bipolar transistors, pinch resistors, and diodes, all incorporating transition regions, are also disclosed. |
