Microelectronic semiconductor element manufacturing method
摘要
The manufacturing method uses a silicon carbide semiconductor in which doped regions are formed by ion implantation, with resulting damage to the semiconductor repaired by irradiation of the entire surface of the semiconductor with optical radiation for a defined time interval, with simultaneous application of semiconductor material over the doped regions.
申请公布号
DE19808245(C1)
申请公布日期
1999.06.24
申请号
DE19981008245
申请日期
1998.02.27
申请人
DAIMLERCHRYSLER AG, 70567 STUTTGART, DE
发明人
NIEMANN, EKKEHARD, 63454 HANAU, DE;PANKNIN, DIETER, DR., 01277 DRESDEN, DE;SKORUPA, WOLFGANG, DR., 01478 WEIXDORF, DE;WIRTH, HANS, 01326 DRESDEN, DE
