ION IMPLANTER, AND ITS METHOD

摘要

An ion implanter and its method which enable a wafer to be heated uniformly to high temperature at all times regardless of scan operation even if a rotary disc retaining the wafer performs scan operation. Even if a rotary disc (7) performs mechanical scanning, a heater (12) moves synchronously with it, therefore uniform heating to high temperature becomes possible, by installing a heater housing (11) for wafer heating in a scan box (9) to perform the mechanical scanning, and further, installing a heater (12) in the position opposite to the wafer (5).