| 摘要 |
<p>A precharge circuit of a semiconductor memory device precharges bit lines by using input/output data lines. In the precharge circuit for a semiconductor memory device, true and complement input/output data lines selectively receives one of a precharge voltage and a data input/output control signal and precharges true and complement bit lines of the semiconductor memory device or performs a normal information sensing operation in response to the received signal. True and complement multiplexors select one of the precharge voltage and the data input/output control signal in response to a precharge control signal to transmit to the true and complement input/output data lines. According to the precharge circuit, since the precharge operation is performed by using data input/output lines without an additive precharge circuit. Thus an area increase due to a precharge circuit can be removed when designing a DRAM to thereby reduce a design area thereof.</p> |
