| 摘要 |
<p>A projection aligner in which a rectangular illuminated region (21R) on a reticle (R) is illuminated with exposure light from an exposure light source (1), while a pattern in the illuminated region (21R) is projected onto the inside of a rectangular exposed region (21W) on a wafer (W) through a projection optical system (PL), the reticle (R) and the wafer (W) are synchronously scanned relatively to the projection optical system (PL) to transfer the pattern image of the reticle (R) onto a shot region on the wafer (W). The projection magnification of the projection optical system (PL) is within a range of 1/5 - 1/10 and a reticle larger than, for instance, 6'-square (approximately 152 mm-square) is used.</p> |
