IC capacitor having tantalum nitride barrier layer containing a transition metal and/or a lanthanide

摘要

A capacitor in an integrated semiconductor circuit, comprising a first electrode (6) which is electrically connected to a doped area by means of a connecting structure (7), a second electrode (11), a capacitor dielectric (10) which is arranged between both electrodes and a barrier layer (9). The barrier layer (9) is mainly comprised of Ta-Me-N, whereby Me is an element or combination of several elements from the group of transition metals and/or lanthanides.