发明名称 |
METHOD FOR HIGH TEMPERATURE ETCHING OF PATTERNED LAYERS USING AN ORGANIC MASK STACK |
摘要 |
The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.
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申请公布号 |
WO9931718(A1) |
申请公布日期 |
1999.06.24 |
申请号 |
WO1998US25699 |
申请日期 |
1998.12.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YE, YAN;ZHAO, ALLEN;HSIEH, PETER, CHANG-LIN;MA, DIANA |
分类号 |
H01L21/302;H01L21/027;H01L21/311;H01L21/312;H01L21/314;H01L21/316;H01L21/3213;(IPC1-7):H01L21/033;H01L21/321 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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