| 摘要 |
Disclosed is a positive photosensitive composition capable of giving good sensitivity, resolution and resist pattern and exhibiting sufficiently high dry etching resistance on use of an exposure light source of 250 nm or less, particularly 220 nm or less, which composition comprises (A) a compound generating an acid on irradiation of an active light ray or radiation and (B) a resin having (i) at least one polycyclic-type alicyclic group, (ii) at least one ester group which decomposes by the action of an acid and increases the solubility in an alkali developer and (iii) at least one acetal group which decomposes by the action of an acid and increases the solubility in an alkali developer, or comprises (A) a compound generating an acid on irradiation of an active light ray or radiation, (C) a resin having a polycyclic-type alicyclic group and an ester group which decomposes by the action of an acid and increases the solubility in an alkali developer, and (D) a resin having a polycyclic-type alicyclic group and an acetal group which decomposes by the action of an acid and increases the solubility in an alkali developer. |
