Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry

摘要

A low cost highly integrated method of fabricating a heat sink (56) on the backside of a power semiconductor device (12) maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer (10) or package the discrete device-heat sink assembly (60). An etch stop layer (20) is formed between the wafer (10) and the front side power devices (12) to protect them during backside processing and to reduce the contact resistance between the device (12) and its heat sink (56). The heat sinks (56) are formed by thinning, patterning and then plating the wafer (10) in such a manner that the device can be released without dicing. The heat sinks (56) are preferably oversized so that a vacuum tool (76) can grasp the heat sink (56) from above without damaging the device (12) and then compression bond the heat sink (56) onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices (12).