| 摘要 |
A semiconductor device including an SOI MOS field-effect transistor comprising a silicon substrate (1), a thin insulation film (2) formed on the substrate and a thin silicon film (4,5,10,11,12,15) formed on the insulation film. The MOS transistor has a channel region (4,5) of first conductivity type and source and drain regions (10,11) of second conductivity type, a layer of metal silicide having a high melting point (14) adjoining a part of the source and drain regions. A polysilicon layer (12,15) forms the portion of the thin silicon film located between the metal silicide and the insulation film. Since polysilicon promotes silicidation, low resistance silicide source and drain contacts can be achieved, even if the contact width is decreased, thereby avoiding a narrow line effect. Furthermore, the Kink effect can be reduced since polysilicon acts as a minority carrier recombining layer. The present structure is particularly suitable for N-channel MOSFETs. However it is also suitable for P-channel MOSFETs and can be applied to both transistors in an SOI CMOS device. A manufacturing method involving amorphization of a monocrystalline silicon thin film by arsenic implantation and subsequent RTA to form the polysilicon layer is moreover disclosed. <IMAGE> |
