| 摘要 |
PROBLEM TO BE SOLVED: To improve inner lead bonding properies in a semiconductor device of a tape carrier package. SOLUTION: A lead plating layer 32 is formed in an outer lead 30b, in a lead 30 formed on a base tape 20. While, the lead plating layer 32 is not formed in an inner lead 30a in the lead 30. A bump plating layer 14 is formed on a bump 12 of an IC chip 10. At the time of inner lead bonding, the bump plating layer 14 is thermocompressed to the inner lead 30a. As a result, it is possible to restrict the occurrence, etc., of inner lead cracks in the inner lead 30a and improve the inner lead bonding property. |
