发明名称 PHASE SHIFT MASK AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a phase shift mask having a refractive index almost equal to that of its glass substrate by forming a shift pattern which-changes the phase of light from a polymer contg. polysilane having a specified monomer as repeating units in the state of a principal chain. SOLUTION: A light shielding pattern 2 of Cr, MoSi or the like is formed on a quartz glass substrate (SiO2 ) 1. This substrate 1 is then coated, e.g. by spin coating with a photosensitive compsn. contg. polysilane having a monomer represented by the formula as repeating units in the state of a principal chain and the compsn. is dried to form a polysilane film 3 on the substrate 1. Time polysilane preferably has a mol.wt. of 50-100,000, in particular 1,000-10,000 from the relation to the refractive index of the resultant phase shift mask. By this simple process, the objective phase shift mask is obtd. without causing distortion on the mask.
申请公布号 JPH11167194(A) 申请公布日期 1999.06.22
申请号 JP19970332956 申请日期 1997.12.03
申请人 TOSHIBA CORP 发明人 KOBAYASHI YOSHIHITO;HAYASE SHUJI
分类号 G03F1/30;G03F1/68;H01L21/027 主分类号 G03F1/30
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