| 摘要 |
PROBLEM TO BE SOLVED: To improve a dielectric strength between the drain and gate of a field effect transistor, while high speed performance of the transistor is maintained. SOLUTION: A compound semiconductor field effect transistor has an ungate part of a channel region, which is not covered with a gate electrode between the gate electrode and a drain. A plurality of isolation regions 7 are provided in the ungate part in a channel current direction, and the isolation regions are brought into contact with the gate electrode 2. |
