| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is lessened in current density and drive voltage without enlarging an electrode in projection area so as to cause less obstruction to light which is extracted through the front side of the device by a method wherein contact of the current diffusion layer with the electrode provided thereon is enlarged in area. SOLUTION: A laminated light emitting layer 11 composed of an N-type layer 3, an active layer 4, and a P-type layer 5 is provided onto a substrate 1, and a current diffusion layer 6 is provided to the surface of the light emitting layer 11. An electrode 8 is provided onto the surface of the current diffusion layer 6, and the surface of the current diffusion layer 6 which comes into contact with the electrode 8 is turned to a rugged surface. By this setup, the contact area of the electrode 8 with the diffusion layer 6 can be enlarged without increasing the electrode 8 in planar area, so that a contact resistance between the electrode 8 and the current diffusion layer 6 is lessened to decrease a voltage drop. |
