| 摘要 |
PROBLEM TO BE SOLVED: To obtain a III nitride semiconductor light emitting device which is capable of emitting light of short wavelength such as blue to green light of excellent monochromaticity and high intensity. SOLUTION: A III nitride semiconductor light emitting device is composed of an N-type semiconductor layer 1, a P-type semiconductor layer 3 both formed of III nitride semiconductor, and an N-type light, emitting layer 2 of indium- containing III nitride semiconductor, wherein the layer 2 is interposed between the layer 1 and the layer 3. The N-type light emitting layer 2 is set at 5×10<17> cm<-3> to 1×10<19> cm<-3> in donor concentration and equipped with an electron storage region R which selectively stores electrons of carrier plane density 1×10<11> cm<-2> to 5×10<13> cm<-2> near an interface R between the layers 2 and 3. |
