Film forming method and semiconductor device manufacturing method

摘要

A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P2O3is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.