Integrated inductor and capacitor on a substrate and method for fabricating same

摘要

An integrated inductor-capacitor (L-C) structure can be formed on a semiconducting substrate (10) by depositing a metal layer in a pattern that contains an inductor coil (14) and a capacitor bottom electrode (12). A CuFe2O4 film (16) is then deposited on the substrate and over the metal pattern to form the dielectric portion of the L-C structure. A via (17) created in the CuFe2O4 film exposes a portion of the inductor coil. Another metal layer (18) is then deposited over the CuFe2O4 film and in the via, such that this metal layer is electrically connected to the inductor coil through the via. A pattern is also made in the second metal layer to form a top electrode (19) for the capacitor, over the corresponding capacitor bottom electrode, and to form a circuit interconnect to the inductor coil through the via.