| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a field emission type electron emitting element capable of suppressing the electric current fluctuation to the minimum and at the same time suppressing local large current flow without increasing the operational voltage and formable on a glass substrate easy to lower the cost and to enlarge the surface area of the element. SOLUTION: This field emission type cold electron emitting element is produced by sequentially forming a first conductive layer 2, an insulating layer 5, and a gate electrode 7 on an insulating substrate 1, forming an aperture part B in the insulating layer 5 and the gate electrode 7, and forming an emitter 8 in the aperture part B while keeping the emitter 8 from a contact with the gate electrode 7. In this case, the emitter 8 is made of a metal oxide or a metal nitride and a second conductive layer 3 is formed on the insulating substrate 1 while being kept from a contact with the first conductive layer 2. Further, a semiconductive thin layer 4 of a non- monocrystal silicon is formed at least on the insulating substrate 1 between the first conductive layer 2 and the second conductive layer 3 and a third conductive layer 6 is formed on or under the semiconductor thin layer 4 through a gate insulating layer 5' while being kept from a contact with the first conductive layer 2 and the second conductive layer 3.</p> |
