| 摘要 |
PCT No. PCT/SE96/00034 Sec. 371 Date Mar. 5, 1997 Sec. 102(e) Date Mar. 5, 1997 PCT Filed Jan. 17, 1996 PCT Pub. No. WO96/22610 PCT Pub. Date Jul. 25, 1996The invention relates to a method in which proton or ion implantation is used for restructuring a silicon carbide region from being conductive to being resistive and wherein this implantation method is used for manufacturing a semiconductor device which comprises a p-n junction where both the p-conductive and the n-conductive layers are designed as doped layers of silicon carbide (SiC), whereby the implantation method is used for at least one of the steps passivation of a silicon carbide surface of the device with a semi-insulating layer, definition of the area of the p-n junction during manufacture, termination of the edges of the p-n junction by means of a semi-insulating layer, creation of a positive edge angle at the edge of the p-n junction, and insulation of different devices from one another during manufacture of a plurality of devices on one and the same wafer of silicon carbide, wherein the invention also relates to the implantation method proper.
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