发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To contrive to reduce a size and costs by a method, wherein a step is formed in a metal thick foil of a substrate, and a shift-back region of a wire bonder is dispensed with, and a substrate size is reduced. SOLUTION: A metal thick foil jointed to a metal base plate 2 via an insulation layer 4 is set as a metal thick foil 13 with a step. Namely, a step is provided in the thickness of a wire joint part 13A and a semiconductor chip solder part 13B in the metal thick foil 13 with a step such that the height from the insulation layer 4 of the wire joint part 13A which joints a wire 7 is higher than that from the insulation layer 4 on a crest face of a semiconductor chip 5 soldered, and it is possible to shift back on a semiconductor chip 5A after wire bonding, and a shift-back region SB is dispensed with.
申请公布号 JPH11168118(A) 申请公布日期 1999.06.22
申请号 JP19970332888 申请日期 1997.12.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARAI NORIYOSHI;TSUKAMOTO HIDEKI
分类号 H01L21/60;H01L21/607 主分类号 H01L21/60
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