发明名称 |
Method of forming shallow diffusion layers in a semiconductor substrate in the vicinity of a gate electrode |
摘要 |
A method of forming shallow diffusion layers in a semiconductor substrate is provided wherein the shallow diffusion layers are positioned in the vicinity of edge portions of a gate electrode and laterally extend from source/drain diffusion layers having a bottom level deeper than the shallow diffusion layers. The above method comprises the following steps. Crystal defects are selectively formed at least in predetermined shallow regions positioned in a surface region of the semiconductor substrate and in the vicinity of the edge portions of the gate electrode. The predetermined shallow regions are laterally in contact with impurity-introduced deep regions having been formed. The predetermined shallow regions have a bottom level shallower than the impurity-introduced deep regions. Subsequently, the semiconductor substrate is subjected to a heat treatment not only to cause a vertical diffusion of an impurity from the impurity-introduced regions so as to selectively form the source/drain diffusion layers but also to cause a rate-increased lateral diffusion of the impurity from the impurity-introduced regions through the predetermined shallow regions so as to selectively form the shallow diffusion layers.
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申请公布号 |
US5915196(A) |
申请公布日期 |
1999.06.22 |
申请号 |
US19960746486 |
申请日期 |
1996.11.12 |
申请人 |
NEC CORPORATION |
发明人 |
MINEJI, AKIRA |
分类号 |
H01L29/78;H01L21/223;H01L21/225;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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