发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a constitution, wherein TFTs having a crystallinity, which requires a peripheral circuit region, and a pixel region on the same substrate in an active-matrix liquid crystal display device, is formed. SOLUTION: A TFT for peripheral circuit region use and a TFT for pixel region use are formed on the same substrate using a crystalline silicon film. This crystalline silicon film is formed by method wherein a catalyst element (such as nickel) for accelerating a crystallization of an amorphous silicon film is introduced in the amorphous silicon film and the amorphous silicon film is crystallized by heating. At this time, as a crystallinity, which is required by peripheral circuit regions A, A', B and B', and a crystallinity, which is required by a pixel region, are different from each other, the implantation amount of the pixel is selectively changed according to the regions A, A', B and B' and the pixel region.</p>
申请公布号 JPH11168219(A) 申请公布日期 1999.06.22
申请号 JP19980248799 申请日期 1998.09.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYANAGA SHOJI;OTANI HISASHI;TAKEMURA YASUHIKO
分类号 G02F1/136;G02F1/1368;G09F9/00;G09F9/33;H01L21/02;H01L21/20;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/136
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