| 摘要 |
PROBLEM TO BE SOLVED: To realize a storage-node electrode, without the shortage with word lines and bit lines, by adequately securing margin of matching for photolithography. SOLUTION: After the formation of a storage contact hole 13 for exposing an impurity dispersing layer 7 (source) by forming a silicon nitride film 12, a silicon oxide film 11 and an interlayer insulating film 8, a sidewall 15 is formed through anisotropic etching, wherein the silicon nitride film 12 is made to be the stopper, in the storage contact hole 13. Through the formation of the sidewall 15, the hole diameter of the storage contact hole 13 can be made smaller than the minimum exposing dimension, and the short-circuiting with the storage-node electrode 13, bit lines 6 and a gate electrode 5 is prevented. |
