| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which can be easily implemented for a DRAM cell. SOLUTION: A random access memory cell 250 is provided with a trench capacitor 210 formed on a substrate 203 as well as a shallow trench isolation (ST1) 230 which is laminated on a part of the trench capacitor 210. Thus the residual parts of the (ST1) 230 are located on the trench capacitor 210, the random access memory cell is provided with a transistor arranged on the opposite side of substrate of the ST1 230 as well as dielectric layer 233 arranged on the trench capacitor 210. |
