发明名称 Phase shifting mask and a manufacturing method therefor
摘要 A phase shifting mask and manufacturing method therefor has an improved step coverage by forming a shielding layer pattern by way of a phase shifting layer. The phase shifting mask includes an optically transmitting substrate, and a transmitting pattern and a non-transmitting pattern formed onto the substrate, in which the transmitting pattern has a linewidth more than a limit resolution with respect to an exposure light, and the non-transmitting pattern has a line width below the limit resolution with respect to the exposure light.
申请公布号 US5914204(A) 申请公布日期 1999.06.22
申请号 US19970964010 申请日期 1997.11.04
申请人 LG SEMICON CO, LTD 发明人 LEE, JUN-SEOK
分类号 G03F1/08;G03F1/00;H01L21/027;H01L21/31;(IPC1-7):G03F9/00 主分类号 G03F1/08
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