| 摘要 |
A method for the fabrication of a semiconductor device is characterized by a series of steps comprising successively forming a trench in a field region of monosilicon substrate and forming an oxidation-preventive layer and a silicon layer in the trench, and oxidizing the silicon layer into a field oxide film to produce a channel stop region beneath the trench in the substrate. The method alternatively comprises forming a trench having a small pattern in a field region of a monosilicon substrate, sequentially forming an oxidation-preventive layer and a silicon layer on the surface of the trench, and oxidizing the silicon layer and the substrate of a field region having a large pattern size, at the same time, to produce a field oxide film and channel stop diffusion regions below both the trench and the field oxide film having a large pattern. Such channel stop diffusion regions contribute to minimizing the redistribution of channel stop ions in the monosilicon substrate below both the trench and the field oxide film having a large pattern. In addition, the channel stop diffusion region restrains stress caused by oxidation of the monosilicon substrate and improves the insulation properties of the field region.
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