发明名称 |
Methods of making high voltage GaN-A1N based semiconductor devices |
摘要 |
The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.
|
申请公布号 |
US5915164(A) |
申请公布日期 |
1999.06.22 |
申请号 |
US19950583148 |
申请日期 |
1995.12.28 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
TASKAR, NIKHIL R.;MENSZ, PIOTR M.;KHAN, BABAR A. |
分类号 |
H01L29/20;H01L21/285;H01L21/335;H01L29/10;H01L29/51;H01L29/78;H01L29/786;H01L29/80;(IPC1-7):H01L21/00 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|