| 摘要 |
PROBLEM TO BE SOLVED: To expand a 'margin between a second contact hole and a storage electrode' at a memory region end part and to improve the yield rate and the reliability. SOLUTION: The thickness of a second photoresist film when a storage electrode 18 is formed is made to be a film thickness, which is different from the thickness of a first photoresist film when a second contact hole 17 is formed by just the half period portion of a sensitivity curve. Thus, the dimension-change tendency, when the photoresist film thickness becomes thin by the step difference at the end part of the memory cell region becomes equal at the second contact hole 17 and the storage electrode 18. Therefore, 'the margin between the second contact hole 17 and the storage electrode 18' is expanded at the end part of the memory cell region. |
