| 摘要 |
PURPOSE:To heighten the integration capability of a chip by dividing a driving wire to which sense amplifiers are connected in parallel in an arranging direction in a column direction, and forming a wire connecting a power source at the upper side of a memory cell array part. CONSTITUTION:A sense amplifier string SAL is divided into plural units 1-4 at every prescribed number of sense amplifiers, and sense amplifier driving lines L(n), L(p) formed in a direction of word line WL are divided into plural unit sense amplifier driving lines L1(n)-L4(n),L1(p)-L4(p) in accordance with divided units 1-4, and they are connected to power source lines Vss, Vcc at a second wiring layer W2 different from a first wiring layer W1 by unit sense amplifier connection wires SAN1-SAN4, SAP1-SAP4 formed in a direction of bit line BL. In such a way, it is possible to form the wiring width of the sense amplifier driving line formed on the sense amplifier thinly, and to reduce a chip area. |
