| 摘要 |
A semiconductor device, which can realize a high speed operation of a transistor with a small leakage current whenever such operation is required, is disclosed. A SOI layer is formed on a monocrystalline silicon substrate through a silicon oxide film, and C-MOS circuits (inverter circuits) are configured with P-channel type MOSFETs and N-channel type MOSFETs on the layer. A bias electrode for P-channel is disposed within the silicon oxide film facing the P-channel type MOSFETs, while a bias electrode for N-channel is disposed within the silicon oxide film facing the N-channel type MOSFETs. A bias voltage switching circuit applies electric potentials to the bias electrodes for the P-channel and the N-channel to increase the respective absolute values of threshold voltages of the P-channel type and N-channel type MOSFETs when the MOSFETs are in a waiting state and applies the electric potentials to the bias electrodes for the P-channel and the N-channel to reduce the respective absolute values of threshold voltages of the P-channel type and N-channel type MOSFETs when the MOSFETs are in an operating state.
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