| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, using porous silicon(PS) whose luminous efficiency is improved without accompanying unnecessarily increased series resistance. SOLUTION: A semiconductor light-emitting element has at least a first conductivity-type nanostructure PS layer 12 whose thickness is controlled, and a second conductivity-type nanostructure PS layer 61 and a first conductivity- type mesostructure PS layer 13 which are arranged on both sides of the layer 12 and in contact with it. Since the first conductivity-type nanostructure PS layer 12 is formed through oxidation of non-degenerate crystalline silicon whose thickness has been set beforehand, the thickness with which the maximum luminous efficiency can be obtained is accurately controlled. |
