| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, in which channel threshold-voltage is controlled by introducing impurities, particularly boron to a channel-forming region in a P-channel MOSFET containing a P-ch power MOSFET. SOLUTION: In a P-channel MOSFET, which has P<+> -type source and drain regions 16, 11 and in which at least the above-mentioned P<+> -type source region 16 has a main surface and is formed in an N-type region 15, in which a channel is shaped, a gate insulating film 13 is formed along the main surface and a polysilicon gate layer 17 which is doped in a P<+> -type is shaped onto the gate insulating film 13, the gate insulating film 13 has a thickness of 200-400Å, a channel region formed in the N-type region 15 under the gate insulating film 13 is formed by diffusing boron from the polysilicon gate layer 17 through at least the gate insulating film 13, and channel threshold voltage in the channel region is controlled.
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