| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase the maximum number of rewrites and holding time. SOLUTION: The memory reads identical data stored in three or more memory cell arrays 200, 201, 202 at once, compares the level of a voltage corresponding to the sum of three or more read currents with that of a reference voltage 204 and outputs the level comparison result as read data of the three or more memory cell arrays 200, 201, 202.</p> |
