| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of leakage current at p-n joint, by setting impurity density of first conductive type on a part near the surface of a semiconductor substrate, in a channel dope area adjacent to a separation area higher than the impurity concentration of first conductive type on parts other than the channel doped area near the surface of the semiconductor substrate. SOLUTION: Trenches 2 are formed on the surface of a silicon substrate in such a way that they isolate an active area 61. The trenches 2 are filled with separating oxide films 3. Then multiple gate electrodes 9 are formed through the medium of a gate oxide film 6 on the surface of the silicon substrate 1. A pair of source/drain areas 4 are formed with a distance from each other on both sides of the gate electrode 9 positioned on the active area 61. P-type channel dope areas 5 are formed in such a way that they are sandwiched between these source/drain areas 4. The impurity concentration of p type of the channel dope area 5 is set higher than the impurity concentration of p type of the rest of the part of the channel doped area 5. |
