| 摘要 |
PROBLEM TO BE SOLVED: To freely design a module by dissolving disconnection problem by constituting an electrode on a semiconductor chip of an electrode layer composed of aluminum, a barrier layer composed of a conductive material in which aluminum and gold are hardly diffused, and an electrode layer composed of gold. SOLUTION: An electrode on a semiconductor chip 2 is formed in such a way that, after a barrier layer 5 is formed by depositing an alloy containing titanium and tungsten at mixing rates of, for example, 10% and 90%, respectively, on an aluminum electrode 3 of a semiconductor chip 2, a gold electrode 6 is formed on the layer 5 and unnecessary parts are removed by etching. When a gold wire 7 is connected to the electrode by using the electrode as a second bonding point connecting section 9, the diffusion of gold in the aluminum layer 3 from the junction 9 under a high-temperature condition is suppressed by the barrier layer 5. In addition, the oxidation at the time of bonding of the aluminum layer 3 can also be prevented by the gold electrode 6. Therefore, the disconnection problem is dissolved and a highly reliable junction can be obtained. |
