| 发明名称 |
Ferroelectric memory cell architecture |
| 摘要 |
The memory cell has a standard format whilst having a simple architectural structure. The input drive system uses a new method. A grid isolation layer has a grid electrode and lower formed source/drain areas with an upper isolating film or ferroelectric layer. |
| 申请公布号 |
FR2772508(A1) |
申请公布日期 |
1999.06.18 |
| 申请号 |
FR19980013504 |
申请日期 |
1998.10.28 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
AOKI MASAKI;FAMURA HIROTAKA;TAKAUCHI HIDEKI;ESHITA TAKASHI |
| 分类号 |
G11C11/22;H01L21/28;H01L27/115 |
主分类号 |
G11C11/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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