| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which is capable of suppressing the fluctuations of the resistance value of resistance element and of realizing the highly accurate resistance element. SOLUTION: Exposure is made by using a photomask 17 having a photomask pattern 14 for a resistance element and other photomask patterns 15 and 16, which are provided in the neighborhood of the mask pattern 14 for the resistance element and suppress the fluctuations of the dimensions of the resistance element through the interference of light in the exposure process. The separation width between the photomask pattern 14 for the resistance element and the other photomask patterns 15 and 16 is set at twice or more of the minimum dimension of the layout rule for the photomask pattern (e.g. 1.0μm).
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