| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor substrate where plural formation, composite formation, and high level integration of elements are enabled by preventing deterioration of characteristics of an electric device such as a MESFET and a HEMT and deterioration of an optical device such as an LED and an LD, and making element isolation of the above devices sure. SOLUTION: In a compound semiconductor substrate, a compound semiconductor layer composed of group III-V elements in a periodic table is continuously epitaxially grown on a substrate composed of group IV single element in a periodic table. The above compound semiconductor layer contains at least one kind of element out of group II or IV or VI elements in a periodic table, so that a gradient whose atomic concentration on the interface side with the above substrate is at least 1×10<17> atoms.cm<-3> , and atomic concentration on the surface side is at most 1×10<17> atoms.cm<-3> . |
