SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To reduce or compensate influence of dishing of a bonding pad in a semiconductor device having a copper wiring. SOLUTION: In a method, a semiconductor device containing a process for providing an opening part 30 in a bonding pad forming area of an uppermost layer 28 in a plurality of interlayer insulating films 21, 23 and 28 and forming a bonding pad 32 by burying a conductive material into the opening part 30. An opening part 25 is formed on the interlayer insulating film 23 of a lower layer before the opening part 30 of the uppermost layer 28 is formed and the thickness of the bonding pad 32 is made to be thick.