发明名称 SUBSTRATE LITHOGRAPHY AND SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for processing a substrate with high throughput, regardless of the processing history of the wafer to be processed. SOLUTION: In lithography including a step of forming a pattern on a substrate W, an identification numeral 121 applied to the substrate W and processing conditions under which the substrate W was actually processed in a first lithography process are stored, the numeral 121 of the substrate W subjected to the first lithography is read out, the stored processing conditions are called out with the use of the identification numeral 121, and the substrate W is subjected to a second lithography process, based on the called processing conditions. Since the conditions are called out with use of the stored numeral 121 of the substrate W subjected to the first lithography process and the substrate is subjected to the second lithographic process under these conditions, once an order of processings already carried out for each substrate can be known based on the identification numeral, the order can be adjusted, and then the second lithographic process can be carried out.
申请公布号 JPH11162842(A) 申请公布日期 1999.06.18
申请号 JP19970343966 申请日期 1997.11.28
申请人 NIKON CORP 发明人 NAKAJIMA SHINICHI
分类号 G03F9/00;H01L21/02;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F9/00
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