| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure which has a Bragg reflection layer provided in a GaN-based light-emitting device, thus preventing the deterioration of characteristics of the light-emitting device due to dislocation lines, and in which protection of the Bragg reflection layer is made possible. SOLUTION: A multilayered body S, including a light-emitting layer S3, is formed by sequentially growing layers made of GaN-based crystal on a base substrate 1 as a lowermost layer, and electrodes X and Y are formed thereon, thus producing a GaN-based light-emitting device. At this time, one of the layers of the multilayered body S is caused to be a dislocation line control layer (a layer S1 in the drawing). The dislocation line control layer S1 is a layer grown on a surface on which a mask layer M has been provided. The dislocation line control layer S1 has a non-mask region as a growth start surface and is grown, until it covers the upper surface of the mask layer M. In the multilayered body S, a Bragg reflection layer B1 is provided on a layer side which is lower than the light-emitting layer S3 and the dislocation line control layer S1. Through the mask layer M, the Bragg reflection layer B1 on the lower layer side is protected at the same time, since the upper layer side is caused to have less dislocations. |
